Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography

	Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography
	Qiao, YB ; Feng, SW ; Xiong, C ; Zhu, H
刊名	ieee transactions on device and materials reliability
	2014
卷号	14 期号:1 页码:413-417
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/25951]
专题	半导体研究所_光电子器件国家工程中心
推荐引用方式 GB/T 7714	Qiao, YB,Feng, SW,Xiong, C,et al. Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography[J]. ieee transactions on device and materials reliability,2014,14(1):413-417.
APA	Qiao, YB,Feng, SW,Xiong, C,&Zhu, H.(2014).Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography.ieee transactions on device and materials reliability,14(1),413-417.
MLA	Qiao, YB,et al."Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography".ieee transactions on device and materials reliability 14.1(2014):413-417.