Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy

	Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy
	Chen P(陈平) ; Chen HJ(陈海杰) ; Qin MS(秦明升) ; Yang ZY(杨重寅) ; Zhao W(赵伟) ; Liu YF(刘玉峰) ; Zhang WQ(张文清) ; Huang FQ(黄富强)
刊名	Journal of Applied Physics
	2013-12-24
期号	113 页码:213509
其他题名	Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy
通讯作者	黄富强
学科主题	材料科学
语种	中文
WOS记录号	WOS:000320674500025
公开日期	2014-12-18
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/4617]
专题	上海硅酸盐研究所_能量转换材料重点实验室_期刊论文
推荐引用方式 GB/T 7714	Chen P,Chen HJ,Qin MS,et al. Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy[J]. Journal of Applied Physics,2013(113):213509.
APA	陈平.,陈海杰.,秦明升.,杨重寅.,赵伟.,...&黄富强.(2013).Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy.Journal of Applied Physics(113),213509.
MLA	陈平,et al."Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy".Journal of Applied Physics .113(2013):213509.