Infrared lens thermal effect: equivalent focal shift and calculating model | |
Zhang CS(张程硕); Shi ZL(史泽林)![]() ![]() ![]() | |
2014 | |
会议名称 | International Symposium on Optoelectronic Technology and Application 2014 |
会议日期 | May 13-15, 2014 |
会议地点 | Beijing, China |
关键词 | Infrared systems Thermal effect Defocus Aberrations Wave aberration |
页码 | 1-8 |
中文摘要 | It's well-know that the focal shift of infrared lens is the major factor in degeneration of imaging quality when temperature change. In order to figure out the connection between temperature change and focal shift, partial differential equations of thermal effect on light path are obtained by raytrace method, to begin with. The approximately solution of the PDEs show that focal shift is proportional to temperature change. And a formula to compute the proportional factor is given. In order to understand infrared lens thermal effect deeply, we use defocus by image plane shift at constant temperature to equivalently represent thermal effect on infrared lens. So equivalent focal shift (EFS) is defined and its calculating model is proposed at last. In order to verify EFS and its calculating model, Physical experimental platform including a motorized linear stage with built-in controller, blackbody, target, collimator, IR detector, computer and other devices is developed. The experimental results indicate that EFS make the image plane shift at constant temperature have the same influence on infrared lens as thermal effect and its calculating model is correct. |
收录类别 | EI ; CPCI(ISTP) |
产权排序 | 1 |
会议录 | Proc. Of SPIE 9301, International Symposium on Optoelectronic Technology and Application
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会议录出版者 | SPIE |
会议录出版地 | Bellingham, WA |
语种 | 英语 |
ISSN号 | 0277-786X |
WOS记录号 | WOS:000349371300066 |
内容类型 | 会议论文 |
源URL | [http://ir.sia.cn/handle/173321/15330] ![]() |
专题 | 沈阳自动化研究所_光电信息技术研究室 |
推荐引用方式 GB/T 7714 | Zhang CS,Shi ZL,Feng B,et al. Infrared lens thermal effect: equivalent focal shift and calculating model[C]. 见:International Symposium on Optoelectronic Technology and Application 2014. Beijing, China. May 13-15, 2014. |
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