采用中频磁控溅射Ti80Si20 复合靶在单晶硅表面制备了共掺杂的类金刚石薄膜. 研究了沉积温度对薄膜生长速率、化学成分、结构、表面性质和力学性能的影响. 结果表明: 随沉积温度升高, 薄膜生长速率降低,薄膜Ti 和Si 原子浓度增加, C 原子浓度降低; 在高温下沉积的薄膜具有低sp³C 含量、低表面接触角、低内应力和高的硬度与弹性模量. 基于亚表层注入生长模型分析了沉积温度对薄膜生长和键合结构的影响, 从薄膜生长机制和微观结构解释了表面性质和力学性能的变化.

Titanium and silicon co-doped diamond-like carbon films are deposited on Si substrates by middle-frequency magnetron sputtering Ti80Si20 composite target. The influences of deposition temperature on the growth rate, chemical composition, structure, surface and mechanical properties of the film are investigated. The results show that the growth rate of the film decreases as substrate temperature increases. With the increasing of substrate temperature, Ti and Si atom content values in the film increase, while C atom content value decreases. At high temperatures, the film has low sp³C fraction, surface contact angle, compressive stress, and high hardness, and elastic modulus. The influences of deposition temperature on the growth and bonding structure of the film are analyzed in view of the subplantation growth model. The changes in surface and mechanical properties are correlated with the growth mechanism and microstructures of the film.