Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon | |
Wang FG(王富国)1![]() ![]() ![]() ![]() | |
刊名 | ECS Journal of Solid State Science and Technology
![]() |
2014 | |
卷号 | 3期号:3页码:P32-P36 |
ISSN号 | 2162-8769 |
通讯作者 | 张俊彦 |
英文摘要 | Porous silicon (PS) films with photocarrier-created pores (PCPs) in the films and symbiotic inverted pyramids (SIPs) at the interfaces were prepared by electrochemical etching of n-type silicon in HF ethanol solution. The effect of back side illumination, doping level of silicon, current density and HF concentration on pore and interface morphology of PS films were investigated. SEM results demonstrated that Photocarriers, generated by back side illumination, was essential to the formation of PCPs and SIPs. The moderately doped n-type silicon with P doping level in 1.1 × 1017−2 × 1016 was suitable for PCP formation. The sizes of SIPs and the quantity of PCPs at their centers could be adjusted by current density when it was smaller than 25 mA cm−2, in which the formation of PCPs competed with the growth of PS film for photocarriers and the increase of current density enhanced the growth of PS film. The formation of SIPs with four crystal planes approaching energy-stable (111) planes was believed to balance these two competitive behaviors. Since the PCPs were actually caused by photocarrier-promoted chemical etching, the HF concentration suitable for PCP formation was smaller than 20%. |
学科主题 | 材料科学与物理化学 |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000331796100009 |
公开日期 | 2014-10-16 |
内容类型 | 期刊论文 |
源URL | [http://210.77.64.217/handle/362003/6526] ![]() |
专题 | 兰州化学物理研究所_先进润滑与防护材料研究发展中心 兰州化学物理研究所_固体润滑国家重点实验室 |
通讯作者 | Zhang JY(张俊彦) |
作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Stomatol, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Wang FG,Zhang MZ,Zhao GT,et al. Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon[J]. ECS Journal of Solid State Science and Technology,2014,3(3):P32-P36. |
APA | Wang FG,Zhang MZ,Zhao GT,Cheng JC,Zhang JY,&张俊彦.(2014).Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon.ECS Journal of Solid State Science and Technology,3(3),P32-P36. |
MLA | Wang FG,et al."Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon".ECS Journal of Solid State Science and Technology 3.3(2014):P32-P36. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论