Negative Temperature Coefficient (NTC) thermistors are extensively utilized in many aspects of domestic and industrial applications for their advantages of high accuracy, good interchangeability, and high reliability. In recent years, considerable progress has been made in the fabrication of spinel-type Mn-Co-Ni-O thin film NTC thermistors, however, to satisfy the requirements for Si-based semiconductor integration technology, the growth temperature of crystalline Mn-Co-Ni-O thin films must be lowered down to a reasonable level. On the other hand, the previously reported Mn-Co-Ni-O thin films were all amorphous or polycrystalline with all grain orientations rather than single-oriented. However, some electrical, optical, and magnetic properties of the films are sensitive to the crystallographic orientation. Thus, growing Mn-Co-Ni-O thin films with specific crystallographic orientation is needed in order to better control the properties. Moreover, for spinel-type Mn-Co-Ni-O materials, it is difficult to achieve high-quality epitaxial thin film growth because of their complicated structure, high melting point, and the strong possibility of second phase generating during the high temperature crystallization process, and there has been no report for epitaxial growth of Mn-Co-Ni-O thin films. Nevertheless, epitaxial thin films with improved crystalline quality and homogeneity are essential to the reliability and stability of semiconductor thin film devices, thus it’s of great technological importance to fabricate high-quality epitaxial Mn-Co-Ni-O thin films and investigate their properties. In this thesis, laser molecular beam epitaxy (LMBE) technique is applied in the fabrication of spinel-type Mn-Co-Ni-O thin films for the first time, taking Mn1.56Co0.96Ni0.48O4 thin films as the research object. Through optimizing the parameters in the LMBE process, the growth temperature of crystalline Mn1.56Co0.96Ni0.48O4 thin films is significantly reduced. Single-[100]-oriented Mn1.56Co0.96Ni0.48O4 thin films are successfully grown for the first time, and the influence of the growth conditions on the structural and electrical properties of the films are investigated. Epitaxial growth of Mn1.56Co0.96Ni0.48O4 thin films is achieved for the first time, and the epitaxial structure and electrical properties of the films are characterized and analyzed in detail. Moreover, thickness effects on the electrical properties are found for epitaxial Mn1.56Co0.96Ni0.48O4 thin films. The main results are summarized as follows. (1) For single-[100]-oriented Mn1.56Co0.96Ni0.48O4 thin films grown using LMBE technique, by raising the laser pulse energy to 275 mJ and pumping the vacuum chamber to 1×10-6 Pa, the lowest crystallization temperature of the films can be reduced to room temperature (25 °C), which is much lower than the previously reported crystallization temperature of 600 °C. The optimum angle between the incident laser and the surface of the target is 45°. The optimum distance between the target and the substrate is 40 ~ 60 mm. The films grow in 2-dimensional layer mode when the laser pulse repetition frequency is in the range of 1 ~ 5 Hz, while the growth mode gradually turns into 3-dimensional island mode when the repetition frequency is over 6 Hz. The surface smoothness of the films can be greatly improved through in situ annealing, and the optimum in situ annealing time is 1 h. After post annealing in air, the stress in the films is significantly reduced and the crystalline quality of the films is greatly improved; while the surface roughness of the films is increased and islands begin to appear on the surfaces of the films. The optimum post annealing temperature and time are 800 °C and 2 h, respectively. (2) In the temperature range of 0-100 °C, the current-voltage characteristics of single-[100]-oriented Mn1.56Co0.96Ni0.48O4 thin films show Ohmic behavior in the voltage range of -10 ~ +10 V, and the resistance-temperature re