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	Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
	Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang
刊名	applied physics letters
	2013-10
卷号	103期号:15页码:152109
学科主题	微电子学
公开日期	2014-06-03
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/25084]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth[J]. applied physics letters,2013,103(15):152109.
APA	Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang.(2013).Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth.applied physics letters,103(15),152109.
MLA	Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang."Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth".applied physics letters 103.15(2013):152109.

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