High temperature operating (80C) 795-nm VCSEL based on InAlGaAs MQWs active region

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出 > 会议论文

	High temperature operating (80C) 795-nm VCSEL based on InAlGaAs MQWs active region
	Zhang X.
	2013
会议名称	5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013
会议地点	Beijing, China
英文摘要	Design of the active region and analysis of temperature sensitivity of high-temperature operating 795-nm special VCSELs for Chip-Scale Atomic Clock (CSAC) are presented. Composition and thickness of the InAlGaAs multiple quantum wells (MQWs) are optimized at room and elevated temperatures. Temperature sensitivity of the threshold current is analyzed by calculating the temperature dependence of cavity-mode gain over a broad temperature range (25C-150C). A self-consistent VCSEL model based on quasi 3D finite element analysis is employed to investigate self-heating effects and temperature distribution in the proposed structure. Output power of 2.5mW is expected from 10m aperture VCSELs at 10mA current at ambient temperature of 358K. 2013 SPIE.
收录类别	EI
会议录	5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013
会议录出版者	SPIE
会议录出版地	Beijing, China
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/41079]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Zhang X.. High temperature operating (80C) 795-nm VCSEL based on InAlGaAs MQWs active region[C]. 见:5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013, June 25, 2013 - June 27, 2013. Beijing, China.