Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets
	Zhang X.
刊名	Optics Express
	2013
卷号	21 期号:8
ISSN号	ISBN/1094-4087
英文摘要	In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra. (C) 2013 Optical Society of America
收录类别	SCI ; EI
语种	英语
公开日期	2014-05-14
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40741]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang X.. Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets[J]. Optics Express,2013,21(8).
APA	Zhang X..(2013).Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets.Optics Express,21(8).
MLA	Zhang X.."Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets".Optics Express 21.8(2013).