Inverted CdSe/CdS/ZnS quantum dot light emitting devices with titanium dioxide as an electron-injection contact
Ji W. ; Jing P. ; Zhao J. ; Liu X. ; Wang A. ; Li H.
刊名Nanoscale
2013
卷号5期号:8
ISSN号ISBN/20403364
英文摘要We demonstrated the fabrication of inverted CdSe/CdS/ZnS quantum dot light emitting devices (QD-LEDs) using titanium dioxide (TiO2) as an electron-injection layer and investigated the operating mechanism by utilizing different hole-transport materials, 4,4-N,N-dicarbazole-biphenyl (CBP) and 4,4,4-tris(carbazol-9-yl)-triphenylamine (TCTA). A more efficient device with CBP as the hole-transport layer (HTL) was obtained compared with the TCTA based device. The peak efficiency of 6.70 cd A -1 for the CBP based device was found to be about 74.5% higher than the TCTA based device (3.84 cd A-1). The studies on the time-resolved photoluminescence spectra of the QD-HTL composite structures showed that the energy transfer (ET) efficiencies from the two HTLs to the QD layer were similar and the charge separation between QDs and HTLs could be neglected. The enhancement in the performance of the CBP based device was attributed to the more efficient hole-injection from CBP to QDs. The Royal Society of Chemistry 2013.
收录类别SCI ; EI
公开日期2014-05-14
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/40721]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Ji W.,Jing P.,Zhao J.,et al. Inverted CdSe/CdS/ZnS quantum dot light emitting devices with titanium dioxide as an electron-injection contact[J]. Nanoscale,2013,5(8).
APA Ji W.,Jing P.,Zhao J.,Liu X.,Wang A.,&Li H..(2013).Inverted CdSe/CdS/ZnS quantum dot light emitting devices with titanium dioxide as an electron-injection contact.Nanoscale,5(8).
MLA Ji W.,et al."Inverted CdSe/CdS/ZnS quantum dot light emitting devices with titanium dioxide as an electron-injection contact".Nanoscale 5.8(2013).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace