Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction

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	Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction
	Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo
刊名	aip advances
	2013
卷号	3 期号:7 页码:072112
学科主题	微电子学
收录类别	EI
语种	英语
公开日期	2014-05-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/25000]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction[J]. aip advances,2013,3(7):072112.
APA	Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo.(2013).Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction.aip advances,3(7),072112.
MLA	Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo."Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction".aip advances 3.7(2013):072112.