A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching

	A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching
	Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang
刊名	j. phys. chem. c
	2013
卷号	117 期号:47 页码:25090–25096
学科主题	微电子学
收录类别	SCI
语种	英语
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24720]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang. A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching[J]. j. phys. chem. c,2013,117(47):25090–25096.
APA	Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang.(2013).A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching.j. phys. chem. c,117(47),25090–25096.
MLA	Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang."A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching".j. phys. chem. c 117.47(2013):25090–25096.