Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate | |
Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming | |
刊名 | chinese physics b |
2013 | |
卷号 | 22期号:11页码:116804 |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-04-04 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24662] |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate[J]. chinese physics b,2013,22(11):116804. |
APA | Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming.(2013).Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate.chinese physics b,22(11),116804. |
MLA | Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming."Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate".chinese physics b 22.11(2013):116804. |
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