Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier | |
Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li | |
刊名 | ecs solid state lett.
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2013 | |
卷号 | 2期号:10页码:r37-r39 |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-04-09 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24786] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li. Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier[J]. ecs solid state lett.,2013,2(10):r37-r39. |
APA | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li.(2013).Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier.ecs solid state lett.,2(10),r37-r39. |
MLA | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li."Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier".ecs solid state lett. 2.10(2013):r37-r39. |
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