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	282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
	Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin
刊名	applied physics letters
	2013
卷号	102期号:24页码:1113
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24769]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates[J]. applied physics letters,2013,102(24):1113.
APA	Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin.(2013).282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates.applied physics letters,102(24),1113.
MLA	Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin."282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates".applied physics letters 102.24(2013):1113.

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