N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

	N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array
	Wang, Liancheng ; Ma, Jun ; Liu, Zhiqiang ; Yi, Xiaoyan ; Yuan, Guodong ; Wang, Guohong
刊名	journal of applied physics
	2013
卷号	114 期号:13 页码:133101
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24760]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,et al. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array[J]. journal of applied physics,2013,114(13):133101.
APA	Wang, Liancheng,Ma, Jun,Liu, Zhiqiang,Yi, Xiaoyan,Yuan, Guodong,&Wang, Guohong.(2013).N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array.journal of applied physics,114(13),133101.
MLA	Wang, Liancheng,et al."N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array".journal of applied physics 114.13(2013):133101.