Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

	Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates
	Emelyanov, E. A. ; Kokhanenko, A. P. ; Pchelyakov, O. P. ; Loshkarev, I. D. ; Seleznev, V. A. ; Putyato, M. A. ; Semyagin, B. R. ; Preobrazhenskii, V. V. ; Niu, Zhicuan ; Ni, Haiqiao
刊名	russian physics journal
	2013
卷号	56 期号:1 页码:55-61
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2014-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24578]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Emelyanov, E. A.,Kokhanenko, A. P.,Pchelyakov, O. P.,et al. Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates[J]. russian physics journal,2013,56(1):55-61.
APA	Emelyanov, E. A..,Kokhanenko, A. P..,Pchelyakov, O. P..,Loshkarev, I. D..,Seleznev, V. A..,...&Ni, Haiqiao.(2013).Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.russian physics journal,56(1),55-61.
MLA	Emelyanov, E. A.,et al."Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates".russian physics journal 56.1(2013):55-61.