Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector

CORC > 青岛生物能源与过程研究所 > 中国科学院青岛生物能源与过程研究所 > 先进有机功能材料团队

	Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector
	Bao, Xichang 1,2; Xu, Jintong 2; Li, Chao 2; Qiao, Hui 2; Zhang, Yan 2; Li, Xiangyang 2
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2013-12-25
卷号	581 期号:2013 页码:289-292
关键词	Photodetector GaN Ion implantation Negative differential capacitance Deep level centers
英文摘要	In this work, back-illuminated planar GaN-based p-i-n photodetectors were fabricated by Si implantation into GaN-based p-i-n structure grown by metal-organic chemical vapor deposition (MOCVD). The dark current density of the photodetector is 1.03 nA/cm(2) under zero bias. The unbiased responsivity is 0.122 A/W at 360 nm, corresponding to an external quantum efficiency of 42%. Temperature and frequency dependence of capacitance versus voltage characteristics of the photodetectors are also investigated respectively. A novel negative differential capacitance (NDC) effect observed in the photodetector at room temperature under the frequency of 120 kHz or at low temperature under relative high frequency (such as 200 kHz). The NDC effect becomes much more obvious with the temperature or frequency decreased. This novel phenomenon is mainly due to the carrier confinement of the deep level centers in the detector, which mainly include lattice defects formed by high dose ion implantation and subsequent annealing. (c) 2013 Elsevier B.V. All rights reserved.
学科主题	先进功能有机材料
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
研究领域[WOS]	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
关键词[WOS]	ULTRAVIOLET PHOTODETECTORS ; IMPLANTATION ; PHOTODIODES ; DETECTORS ; NITRIDE
收录类别	SCI
语种	英语
WOS记录号	WOS:000324823000048
公开日期	2014-03-24
内容类型	期刊论文
源URL	[http://ir.qibebt.ac.cn:8080/handle/337004/1697]
专题	青岛生物能源与过程研究所_先进有机功能材料团队
作者单位	1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
推荐引用方式 GB/T 7714	Bao, Xichang,Xu, Jintong,Li, Chao,et al. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,581(2013):289-292.
APA	Bao, Xichang,Xu, Jintong,Li, Chao,Qiao, Hui,Zhang, Yan,&Li, Xiangyang.(2013).Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector.JOURNAL OF ALLOYS AND COMPOUNDS,581(2013),289-292.
MLA	Bao, Xichang,et al."Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector".JOURNAL OF ALLOYS AND COMPOUNDS 581.2013(2013):289-292.