Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field

	Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field
	Jin, Dong-Dong ; Yang, Shao-Yan ; Zhang, Liu-Wan ; Li, Hui-jie ; Zhang, Heng ; Wang, Jian-xia ; Yang, Tao ; Xiang-LinLiu ; Zhu, Qin-Sheng ; Wang, Zhan-Guo
刊名	journal of applied physics
	2013
卷号	113 期号:21 页码:213711-213711-4
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24501]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jin, Dong-Dong,Yang, Shao-Yan,Zhang, Liu-Wan,et al. Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field[J]. journal of applied physics,2013,113(21):213711-213711-4.
APA	Jin, Dong-Dong.,Yang, Shao-Yan.,Zhang, Liu-Wan.,Li, Hui-jie.,Zhang, Heng.,...&Wang, Zhan-Guo.(2013).Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field.journal of applied physics,113(21),213711-213711-4.
MLA	Jin, Dong-Dong,et al."Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field".journal of applied physics 113.21(2013):213711-213711-4.