InAs-mediated growth of vertical InSb nanowires on Si substrates
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang
刊名nanoscale research letters
2013
卷号8
学科主题半导体材料
收录类别SCI
语种英语
公开日期2014-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/24492]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang. InAs-mediated growth of vertical InSb nanowires on Si substrates[J]. nanoscale research letters,2013,8.
APA Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang.(2013).InAs-mediated growth of vertical InSb nanowires on Si substrates.nanoscale research letters,8.
MLA Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang."InAs-mediated growth of vertical InSb nanowires on Si substrates".nanoscale research letters 8(2013).
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