InAs-mediated growth of vertical InSb nanowires on Si substrates | |
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang | |
刊名 | nanoscale research letters |
2013 | |
卷号 | 8 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24492] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang. InAs-mediated growth of vertical InSb nanowires on Si substrates[J]. nanoscale research letters,2013,8. |
APA | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang.(2013).InAs-mediated growth of vertical InSb nanowires on Si substrates.nanoscale research letters,8. |
MLA | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang."InAs-mediated growth of vertical InSb nanowires on Si substrates".nanoscale research letters 8(2013). |
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