Tunable electroluminescence in planar graphene/SiO(2) memristors.

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	Tunable electroluminescence in planar graphene/SiO(2) memristors.
	He, Congli ; Li, Jiafang ; Wu, Xing ; Chen, Peng ; Zhao, Jing ; Yin, Kuibo ; Cheng, Meng ; Yang, Wei ; Xie, Guibai ; Wang, Duoming ; Liu, Donghua ; Yang, Rong ; Shi, Dongxia ; Li, Zhiyuan ; Sun, Litao ; Zhang, Guangyu
刊名	Advanced materials (Deerfield Beach, Fla.)
	2013
卷号	25 期号:39 页码:5593
ISSN号	1521-4095
中文摘要	Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
语种	英语
公开日期	2014-01-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57788]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	He, Congli,Li, Jiafang,Wu, Xing,et al. Tunable electroluminescence in planar graphene/SiO(2) memristors.[J]. Advanced materials (Deerfield Beach, Fla.),2013,25(39):5593.
APA	He, Congli.,Li, Jiafang.,Wu, Xing.,Chen, Peng.,Zhao, Jing.,...&Zhang, Guangyu.(2013).Tunable electroluminescence in planar graphene/SiO(2) memristors..Advanced materials (Deerfield Beach, Fla.),25(39),5593.
MLA	He, Congli,et al."Tunable electroluminescence in planar graphene/SiO(2) memristors.".Advanced materials (Deerfield Beach, Fla.) 25.39(2013):5593.