Resistance switching in oxides with inhomogeneous conductivity

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	Resistance switching in oxides with inhomogeneous conductivity
	Shang, DS ; Sun, JR ; Shen, BG ; Matthias, W
刊名	CHINESE PHYSICS B
	2013
卷号	22 期号:6
关键词	resistance switching inhomogeneous conductivity transition metal oxide
ISSN号	1674-1056
通讯作者	Shang, DS (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e., resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes faster product development as well as accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only in a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed.
资助信息	National Natural Science Foundation of China [11004235, 11274363, 51072224, 11134007]; National Basic Research Program of China [2009CB930803]; Alexander von Humboldt Foundation
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57397]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Shang, DS,Sun, JR,Shen, BG,et al. Resistance switching in oxides with inhomogeneous conductivity[J]. CHINESE PHYSICS B,2013,22(6).
APA	Shang, DS,Sun, JR,Shen, BG,&Matthias, W.(2013).Resistance switching in oxides with inhomogeneous conductivity.CHINESE PHYSICS B,22(6).
MLA	Shang, DS,et al."Resistance switching in oxides with inhomogeneous conductivity".CHINESE PHYSICS B 22.6(2013).