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Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions
Gao, WW ; Hu, L ; Sun, YP ; Sun, JR ; Shen, J ; Chen, RJ ; Chen, YF ; Shen, BG
刊名JOURNAL OF APPLIED PHYSICS
2013
卷号113期号:17
ISSN号0021-8979
通讯作者Sun, JR (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We presented a systematic study on the photoelectronic properties of the La0.67Ba0.33MnO3 (20 nm)/LaMnO3(t)/SrTiO3:0.05wt.% Nb (LBMO/LMO(t)/STON) junctions with 0 <= t <= 30 nm. The short-circuit photocurrent (I-ph) is found to show a complex dependence on the LMO buffer layer. It undergoes first a sharp drop as the layer thickness of LMO increases from 0 to 3 nm and then, after a rigid turn, a slow decrease for further increase in layer thickness. These results indicate that the coupling between LBMO and STON can be effectively depressed by a LMO layer of 3 nm. The photocurrent is further found to be temperature dependent, increasing monotonically upon cooling, and the maximal growth, occurring in the junction of t = 3 nm, can be as high as 226% when cooled from 320K to 40K. Meanwhile, the I-ph-t dependences at different temperatures are similar, which is an indication of temperature independence for the diffusion length of the photocarriers. Analysis of the capacitance-voltage relations indicates that the change of interfacial barrier is the reason for the peculiar photoelectronic behavior observed. (C) 2013 American Institute of Physics.
语种英语
公开日期2014-01-16
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/57335]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Gao, WW,Hu, L,Sun, YP,et al. Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions[J]. JOURNAL OF APPLIED PHYSICS,2013,113(17).
APA Gao, WW.,Hu, L.,Sun, YP.,Sun, JR.,Shen, J.,...&Shen, BG.(2013).Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions.JOURNAL OF APPLIED PHYSICS,113(17).
MLA Gao, WW,et al."Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions".JOURNAL OF APPLIED PHYSICS 113.17(2013).
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