Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films

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	Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films
	Gao, RL ; Yang, HW ; Chen, YS ; Sun, JR ; Zhao, YG ; Shen, BG
刊名	JOURNAL OF APPLIED PHYSICS
	2013
卷号	114 期号:17
ISSN号	0021-8979
通讯作者	Gao, RL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Bi0.9La0.1FeO3 (BLFO) thin films with the thickness of similar to 500 nm were deposited on (001) oriented SrTiO3 substrate with 30 nm LaNiO3 as buffer layer. The switching kinetics process of ferroelectric BLFO thin films was investigated by using pulse voltages. The result shows that one dimension and two dimensions are the prior grown modes of BLFO domains in the polarization switching process. The dimensionality of the domain growth n increases linearly with applied voltage, and the grown model varies from 1 D (n = 1, implies needlelike growth) to 2 D (n = 2, planar growth) with electric pulses increasing. This is explained due to the increase in the density of nucleating domains at high fields where sideway growth is limited. The higher value of n can be an indication of non-homogeneous distribution of domain nuclei. Under all our experimental conditions that the switching time t(sw) is instrumentally limited and therefore the intrinsic switching time of ferroelectric BLFO films is smaller than several nanoseconds. This very short polarization switching time can be explained as a switching mechanism controlled by nucleation rate. Considering the domain walls de-pinning and thermal disturbance, the saturated polarization increases with the temperature increasing under the same input voltage which in turn affects the he switching transient current and switching time. (c) 2013 AIP Publishing LLC.
资助信息	National Basic Research of China; National Natural Science Foundation of China; Knowledge Innovation Project of the Chinese Academy of Sciences; Beijing Municipal Natural Science Foundation
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57011]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Gao, RL,Yang, HW,Chen, YS,et al. Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films[J]. JOURNAL OF APPLIED PHYSICS,2013,114(17).
APA	Gao, RL,Yang, HW,Chen, YS,Sun, JR,Zhao, YG,&Shen, BG.(2013).Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films.JOURNAL OF APPLIED PHYSICS,114(17).
MLA	Gao, RL,et al."Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films".JOURNAL OF APPLIED PHYSICS 114.17(2013).