Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells

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	Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells
	Balocchi, A ; Amand, T ; Wang, G ; Liu, BL ; Renucci, P ; Duong, QH ; Marie, X
刊名	NEW JOURNAL OF PHYSICS
	2013
卷号	15
ISSN号	1367-2630
通讯作者	Marie, X (reprint author), Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France.
中文摘要	Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum wells (QWs) show a strong electric field dependence of the conduction electron spin relaxation anisotropy. This results from the interplay between the Dresselhaus and Rashba spin splitting in this system with C-3v symmetry. By varying the electric field applied perpendicular to the QW plane from 20 to 50 kV cm(-1) the anisotropy of the spin relaxation time parallel (tau(s)(parallel to)) and perpendicular (tau(s)(perpendicular to)) to the growth axis can be first canceled and eventually inversed with respect to the one usually observed in III-V zinc-blende QW (tau(s)(perpendicular to) = 2 tau(s)(parallel to)). This dependence stems from the nonlinear contributions of the k-dependent conduction band spin splitting terms which begin to play the dominant spin relaxing role while the linear Dresselhaus terms are compensated by the Rashba ones through the applied bias. A spin density matrix model for the conduction band spin splitting including both linear and cubic terms of the Dresselhaus Hamiltonian is used which allows a quantitative description of the measured electric field dependence of the spin relaxation anisotropy. The existence of an isotropic point where the spin relaxation tensor reduces to a scalar is predicted and confirmed experimentally. The spin splitting compensation electric field and collision processes type in the QW can be likewise directly extracted from the model without complementary measurements.
资助信息	France-China NSFC-ANR research project SPINMAN [10911130356]; CAS [2011T1J37]; National Basic Research Program of China [2009CB930500]; National Science Foundation of China [10774183, 10874212]
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/56937]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Balocchi, A,Amand, T,Wang, G,et al. Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells[J]. NEW JOURNAL OF PHYSICS,2013,15.
APA	Balocchi, A.,Amand, T.,Wang, G.,Liu, BL.,Renucci, P.,...&Marie, X.(2013).Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells.NEW JOURNAL OF PHYSICS,15.
MLA	Balocchi, A,et al."Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells".NEW JOURNAL OF PHYSICS 15(2013).