Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique

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	Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique
	Niu, EW ; Li, L ; Lv, GH ; Feng, WR ; Chen, H ; Fan, SH ; Yang, SZ ; Yang, XZ
刊名	APPLIED SURFACE SCIENCE
	2007
卷号	253 期号:12 页码:5223
ISSN号	0169-4332
中文摘要	Tantalum nitride films were deposited on silicon wafer and steel substrates by cathodic vacuum arc in N-2/Ar gas mixtures. The chemical composition, crystalline microstructure and morphology of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. According to the results, film composition and microstructure depends strongly on the N-2 partial pressure and the applied negative bias (V-s). (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/54326]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Niu, EW,Li, L,Lv, GH,et al. Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique[J]. APPLIED SURFACE SCIENCE,2007,253(12):5223.
APA	Niu, EW.,Li, L.,Lv, GH.,Feng, WR.,Chen, H.,...&Yang, XZ.(2007).Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique.APPLIED SURFACE SCIENCE,253(12),5223.
MLA	Niu, EW,et al."Synthesis and characterization of tantalum nitride films prepared by cathodic vacuum arc technique".APPLIED SURFACE SCIENCE 253.12(2007):5223.