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Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-root 3x root 3 surfaces
Teng, J ; Guo, JD ; Wu, KH ; Wang, EH
刊名JOURNAL OF CHEMICAL PHYSICS
2008
卷号129期号:3
关键词SCANNING-TUNNELING-MICROSCOPY THIN-FILM TRANSISTORS AG/SI(111)-(ROOT-3 X ROOT-3)R30-DEGREES ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY AU(111) ENERGY POLYCRYSTALLINE DIFFRACTION MOLECULES CHEMISTRY
ISSN号0021-9606
通讯作者Wu, KH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要The growth of pentacene films on different metal (Ga, Pb, Bi, Ag) induced Si(111)-(root 3 x root 3 )R30 degrees surfaces is investigated by scanning tunneling microscopy. On surfaces with high atomic surface roughness, such as Ga/Si-root 3 , beta-Pb/Si-root 3 , and alpha-Bi/Si-root 3 , pentacene forms an initial disordered wetting layer followed by the growth of crystalline thin films. The growth behavior is independent of the metallicity of the substrate surface in this regime. On the other hand, on surfaces with low adatom surface roughness, pentacene molecules form self-organized structures without forming a wetting layer. Moreover, the molecular orientation is critically dependent on the surface metallicity. This work reveals that the growth mode of pentacene on solid surfaces is determined by the combined effects of structural and electronic properties of the substrate. (C) 2008 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/53613]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Teng, J,Guo, JD,Wu, KH,et al. Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-root 3x root 3 surfaces[J]. JOURNAL OF CHEMICAL PHYSICS,2008,129(3).
APA Teng, J,Guo, JD,Wu, KH,&Wang, EH.(2008).Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-root 3x root 3 surfaces.JOURNAL OF CHEMICAL PHYSICS,129(3).
MLA Teng, J,et al."Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-root 3x root 3 surfaces".JOURNAL OF CHEMICAL PHYSICS 129.3(2008).
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