Structure and photoluminescence studies of Pr-implanted GaN | |
Song, SF ; Chen, WD ; Su, FH ; Zhu, JJ ; Ding, K ; Hsu, CC | |
刊名 | JOURNAL OF CRYSTAL GROWTH
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2004 | |
卷号 | 267期号:3-4页码:400 |
关键词 | EMISSION |
ISSN号 | 0022-0248 |
通讯作者 | Song, SF (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. |
中文摘要 | The structure and photoluminscence (PL) properties of Pr-implanted GaN thin films have been studied. RBS/channeling technique was used to explore the damage recovery at high annealing temperature and study the dependence of the radiation damage with ion implantation direction. A complete recovery of the ion implantation damage cannot be achieved at annealing temperatures up to 1050degreesC. It is found that the channeling implantation results in the decrease of the damage. The PL experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050degreesC. Moreover, the PL intensity is also seriously affected by ion implantation geometries. The PL intensity for the sample implanted along channeled direction is nearly 2 times more intense than that observed from the sample implanted along random direction. The thermal quenching of PL intensity from 10 to 300K for sample annealed at 1050degreesC is only 30%. (C) 2004 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/53540] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Song, SF,Chen, WD,Su, FH,et al. Structure and photoluminescence studies of Pr-implanted GaN[J]. JOURNAL OF CRYSTAL GROWTH,2004,267(3-4):400. |
APA | Song, SF,Chen, WD,Su, FH,Zhu, JJ,Ding, K,&Hsu, CC.(2004).Structure and photoluminescence studies of Pr-implanted GaN.JOURNAL OF CRYSTAL GROWTH,267(3-4),400. |
MLA | Song, SF,et al."Structure and photoluminescence studies of Pr-implanted GaN".JOURNAL OF CRYSTAL GROWTH 267.3-4(2004):400. |
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