STM and MBE: one of the best combinations

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	STM and MBE: one of the best combinations
	Fleishman, SJ ; Whitehead, TA ; Strauch, EM ; Corn, JE ; Qin, SB ; Zhou, HX ; Mitchell, JC ; Demerdash, ONA ; Takeda-Shitaka, M ; Terashi, G ; Moal, IH ; Li, XF ; Bates, PA ; Zacharias, M ; Park, H ; Ko, JS ; Lee, H ; Seok, C ; Bourquard, T ; Bernauer, J ; Poupon, A ; Aze, J ; Soner, S ; Ovali, SK ; Ozbek, P ; Ben Tal, N ; Haliloglu, T ; Hwang, H ; Vreven, T ; Pierce, BG ; Weng, ZP ; Perez-Cano, L ; Pons, C ; Fernandez-Recio, J ; Jiang, F ; Yang, F ; Gong, XQ ; Cao, LB ; Xu, XJ ; Liu, B ; Wang, PW ; Li, CH ; Wang, CX ; Robert, CH ; Guharoy, M ; Liu, SY ; Huang, YY ; Li, L ; Guo, DC ; Chen, Y ; Xiao, Y ; London, N ; Itzhaki, Z ; Schueler-Furman, O ; Inbar, Y ; Potapov, V ; Cohen, M ; Schreiber, G ; Tsuchiya, Y ; Kanamori, E ; Standley, DM ; Nakamura, H ; Kinoshita, K ; Driggers, CM ; Hall, RG ; Morgan, JL ; Hsu, VL ; Zhan, J ; Yang, YD ; Zhou, YQ ; Kastritis, PL ; Bonvin, AMJJ ; Zhang, WY ; Camacho, CJ ; Kilambi, KP ; Sircar, A ; Gray, JJ ; Ohue, M ; Uchikoga, N ; Matsuzaki, Y ; Ishida, T ; Akiyama, Y ; Khashan, R ; Bush, S ; Fouches, D ; Tropsha, A ; Esquivel-Rodriguez, J ; Kihara, D ; Stranges, PB ; Jacak, R ; Kuhlman, B ; Huang, SY ; Zou, XQ ; Wodak, SJ ; Janin, J ; Baker, D
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2011
卷号	44 期号:46
关键词	SCANNING-TUNNELING-MICROSCOPY 3-DIMENSIONAL TOPOLOGICAL INSULATOR QUANTUM-WELL STATES SINGLE DIRAC CONE THIN-FILMS LOW-TEMPERATURE SURFACE SUPERCONDUCTIVITY GROWTH PHASE
ISSN号	0022-3727
通讯作者	Jia, JF (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.
中文摘要	Density functional theory calculations reveal that the interfacial 6 root 3 x 6 root 3 structure [awarped graphene layer with periodic inclusions of pentagon-hexagon-heptagon (H(5,6,7)) defects] facilitates a Si diffusion path vertically through the interface layer during epitaxial growth of graphene on SiC(0001). The calculated diffusion barrier is 4.7 eV, competitive with Si interstitial diffusion of similar to 3.5 eV in SiC [M. Bockstedte et al., Phys. Rev. B 68, 205201 (2003)]. Scanning tunneling microscopy study shows that, for growth in an Ar background, where Si desorption is suppressed and all diffusion channels contribute, graphene films with reduced pit density can be grown on nominally flat SiC substrates. On the other hand, for Si diffusion-limited growth in ultrahigh vacuum, the Si interstitial diffusion is the energetically favorable path where the step edges serve as the necessary outlet toward Si desorption. The much higher density of step edges on vicinal substrates also facilitates the growth of pit-free graphene.
收录类别	SCI
资助信息	National Science Foundation [91021002]; Ministry of Science and Technology of China
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53079]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Fleishman, SJ,Whitehead, TA,Strauch, EM,et al. STM and MBE: one of the best combinations[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(46).
APA	Fleishman, SJ.,Whitehead, TA.,Strauch, EM.,Corn, JE.,Qin, SB.,...&Baker, D.(2011).STM and MBE: one of the best combinations.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(46).
MLA	Fleishman, SJ,et al."STM and MBE: one of the best combinations".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.46(2011).