Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire

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	Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire
	Yang, H ; Xu, SJ ; Li, Q ; Zhang, J
刊名	APPLIED PHYSICS LETTERS
	2006
卷号	88 期号:16
关键词	LIGHT-EMITTING-DIODES GALLIUM NITRIDE 2-PHOTON ABSORPTION THIN-FILMS SEMICONDUCTORS TEMPERATURE MICROSCOPY BLUE
ISSN号	0003-6951
通讯作者	Xu, SJ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China.
中文摘要	At room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52139]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yang, H,Xu, SJ,Li, Q,et al. Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire[J]. APPLIED PHYSICS LETTERS,2006,88(16).
APA	Yang, H,Xu, SJ,Li, Q,&Zhang, J.(2006).Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire.APPLIED PHYSICS LETTERS,88(16).
MLA	Yang, H,et al."Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire".APPLIED PHYSICS LETTERS 88.16(2006).