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Regular arrays of GaN nanorods
Li, ZJ ; Chen, XL ; Li, HJ ; Xu, YP
刊名JOURNAL OF CRYSTAL GROWTH
2002
卷号236期号:1-3页码:71
关键词GALLIUM NITRIDE CARBON NANOTUBES NANOWIRES GROWTH DEPOSITION NANOSTRUCTURES CHEMISTRY PHYSICS BLUE
ISSN号0022-0248
通讯作者Chen, XL (reprint author), Chinese Acad Sci, Ctr Condensed Matter Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Phase-sensitive second-harmonic generation (SHG) is employed to investigate domain patterns of c-axis oriented xBi(2)Ti(4)O(11)-(1-x)Bi4Ti3O12 films on SrTiO3 (001) substrates. The film density increases with increasing Bi2Ti4O11 concentration up to x=0.39. No SHG signal was observed on the Bi2Ti4O11 film. Double peaks appear in the curves of the dependence of the SHG signal on the fundamental polarization (0degrees-180degrees), which suggests the net polarization of Bi4Ti3O12 domains oriented along SrTiO3 [110] and [1 (1) over bar0] directions. Under transverse electric field poling along the SrTiO3 [100] direction, the films with x=0.06 and 0.12 behave differently. The double peak intensities both increase monotonically with increasing +/-E fields in the film with x=0.06. However, they change reversibly for the film at x=0.12 with increasing voltage from -2.0 to +2.1 kV. Theoretical modeling suggests the possibility of 180degrees wall motion with an uncorrelated phase relation for the film with x=0.06, but 90degrees wall motion with a complete phase relation for the film with x=0.16. The large dielectric permittivity for the film with x=0.39 is assumed to come from the 90degrees wall motion. (C) 2002 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/51999]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, ZJ,Chen, XL,Li, HJ,et al. Regular arrays of GaN nanorods[J]. JOURNAL OF CRYSTAL GROWTH,2002,236(1-3):71.
APA Li, ZJ,Chen, XL,Li, HJ,&Xu, YP.(2002).Regular arrays of GaN nanorods.JOURNAL OF CRYSTAL GROWTH,236(1-3),71.
MLA Li, ZJ,et al."Regular arrays of GaN nanorods".JOURNAL OF CRYSTAL GROWTH 236.1-3(2002):71.
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