Reactant-governing growth direction of indium nitride nanowires

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	Reactant-governing growth direction of indium nitride nanowires
	Liu, H ; Shi, L ; Geng, X ; Su, R ; Cheng, G ; Xie, S
刊名	NANOTECHNOLOGY
	2010
卷号	21 期号:24
关键词	EPITAXIAL SILICON NANOWIRES INITIO MOLECULAR-DYNAMICS BEAM EPITAXY GAN ORIENTATION POLARITY INN
ISSN号	0957-4484
通讯作者	Liu, H (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou Ind Pk, Jiangsu 215125, Peoples R China.
中文摘要	Hexagonal wurtzite InN nanowires are grown via a vapor-liquid-solid (VLS) mechanism with an Au catalyst. Microstructure characterizations of a large number of nanowires demonstrate that the growth direction of InN nanowires is governed by variable NH(3) flux. InN nanowires at a NH(3) flux of 10 standard cubic centimeters per minute (sccm) grow preferentially in a hexagonal close-packed (hcp) < 10 (1) over bar0 > direction, while those at 100 sccm NH(3) flux favor the hcp < 0001 > direction. A free energy minimization model is proposed to interpret this phenomenon. The first-principles calculations reveal that the < 10 (1) over bar0 > oriented nucleus has the lowest energy at the lower NH(3) flux. In contrast, when NH(3) flux is high, the < 0001 > oriented nucleus has the lowest energy.
收录类别	SCI
资助信息	National Science Foundation of China [10834004]; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51894]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, H,Shi, L,Geng, X,et al. Reactant-governing growth direction of indium nitride nanowires[J]. NANOTECHNOLOGY,2010,21(24).
APA	Liu, H,Shi, L,Geng, X,Su, R,Cheng, G,&Xie, S.(2010).Reactant-governing growth direction of indium nitride nanowires.NANOTECHNOLOGY,21(24).
MLA	Liu, H,et al."Reactant-governing growth direction of indium nitride nanowires".NANOTECHNOLOGY 21.24(2010).