Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation

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	Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation
	Huang, QS ; Guo, LW ; Wang, WJ ; Wang, G ; Wang, WY ; Jia, YP ; Lin, JJ ; Li, K ; Chen, XL
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:4
关键词	HIGH-QUALITY SCATTERING GRAPHITE FILMS
ISSN号	0256-307X
通讯作者	Huang, QS (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	We report new Raman features of epitaxial graphene (EG) on Si-face 4H-SiC prepared by pulsed electron irradiation (PEI). With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC(0001) and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si-and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed.
收录类别	SCI
资助信息	Chinese Academy of Sciences [KJCX2-YW-W22, YYYJ-0701]; Ministry of Science and Technology of China [2007BAE34B00, 2006AA03A146, 2007CB936300, 2006AA03A107]; National Natural Science Foundation of China [50972162, 50702073]; Beijing Municipal Science and Technology Commission [D09080300500000]
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51845]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Huang, QS,Guo, LW,Wang, WJ,et al. Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation[J]. CHINESE PHYSICS LETTERS,2010,27(4).
APA	Huang, QS.,Guo, LW.,Wang, WJ.,Wang, G.,Wang, WY.,...&Chen, XL.(2010).Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation.CHINESE PHYSICS LETTERS,27(4).
MLA	Huang, QS,et al."Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation".CHINESE PHYSICS LETTERS 27.4(2010).