Quantum anomalous Hall effect in single-layer and bilayer graphene

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	Quantum anomalous Hall effect in single-layer and bilayer graphene
	Tse, WK ; Qiao, ZH ; Yao, YG ; MacDonald, AH ; Niu, Q
刊名	PHYSICAL REVIEW B
	2011
卷号	83 期号:15
关键词	ELECTRONIC-PROPERTIES
ISSN号	1098-0121
通讯作者	Tse, WK (reprint author), Univ Texas Austin, Dept Phys, Austin, TX 78712 USA.
中文摘要	The quantum anomalous Hall effect can occur in single- and few-layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated bilayer graphene systems with Rashba spin-orbit coupling. We compute Berry curvatures at each valley point and find that for single-layer graphene the Hall conductivity is quantized at sigma(xy) = 2e(2)/h, with each valley contributing a unit conductance and a corresponding chiral edge state. In bilayer graphene, we find that the quantized anomalous Hall conductivity is twice that of the single-layer case when the gate voltage U is smaller than the exchange field M, and zero otherwise. Although the Chern number vanishes when U > M, the system still exhibits a quantized valley Hall effect, with the edge states in opposite valleys propagating in opposite directions. The possibility of tuning between different topological states with an external gate voltage suggests possible graphene-based spintronics applications.
收录类别	SCI
资助信息	Welch Grant [F1473]; DOE [DE-FG03-02ER45985]; NSFC [10974231]; MOST of China [2007CB925000, 2011CBA00100]
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51640]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tse, WK,Qiao, ZH,Yao, YG,et al. Quantum anomalous Hall effect in single-layer and bilayer graphene[J]. PHYSICAL REVIEW B,2011,83(15).
APA	Tse, WK,Qiao, ZH,Yao, YG,MacDonald, AH,&Niu, Q.(2011).Quantum anomalous Hall effect in single-layer and bilayer graphene.PHYSICAL REVIEW B,83(15).
MLA	Tse, WK,et al."Quantum anomalous Hall effect in single-layer and bilayer graphene".PHYSICAL REVIEW B 83.15(2011).