Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

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	Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation
	Wang, JQ ; Chen, PP ; Li, ZF ; Guo, XG ; Makino, H ; Yao, T ; Chen, H ; Huang, Q ; Zhou, JM
刊名	SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
	2003
卷号	46 期号:5 页码:474
关键词	MOLECULAR-BEAM-EPITAXY MAGNETIC SEMICONDUCTORS SPIN GAN INJECTION FILMS GAAS
ISSN号	1672-1799
通讯作者	Wang, JQ (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
中文摘要	This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The, magnetic behavior has been characterized by superconducting, quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51264]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, JQ,Chen, PP,Li, ZF,et al. Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation[J]. SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46(5):474.
APA	Wang, JQ.,Chen, PP.,Li, ZF.,Guo, XG.,Makino, H.,...&Zhou, JM.(2003).Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation.SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,46(5),474.
MLA	Wang, JQ,et al."Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation".SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY 46.5(2003):474.