Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric
	Fu, WY ; Xu, Z ; Liu, KH ; Wang, WL ; Bai, XD ; Wang, EG
刊名	APPLIED PHYSICS LETTERS
	2008
卷号	93 期号:21
关键词	FLEXIBLE ELECTRONICS HETEROSTRUCTURES TRANSPARENT FABRICATION
ISSN号	0003-6951
通讯作者	Bai, XD (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	In this letter, amorphous Bi(1.5)Zn(1.0)Nb(1.5)O(7) films with large permittivity (similar to 70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature (similar to 100 degrees C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (< 3 V), a high carrier mobility (similar to 42 cm(2)/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric is a promising candidate for high-performance flexible electronics.
收录类别	SCI
资助信息	NSF [50725209, 60621091, 10874218]; MOST [2007CB936203, 2007AA03Z353]; CAS of China
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/49703]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Fu, WY,Xu, Z,Liu, KH,et al. Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric[J]. APPLIED PHYSICS LETTERS,2008,93(21).
APA	Fu, WY,Xu, Z,Liu, KH,Wang, WL,Bai, XD,&Wang, EG.(2008).Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric.APPLIED PHYSICS LETTERS,93(21).
MLA	Fu, WY,et al."Nanowire field-effect transistor with Bi(1.5)Zn(1.0)Nb(1.5)O(7) dielectric".APPLIED PHYSICS LETTERS 93.21(2008).