Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction

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	Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction
	Wang, XN ; Wang, Y ; Zou, J ; Zhang, TC ; Mei, ZX ; Guo, Y ; Xue, QK ; Du, XL ; Zhang, XN ; Han, XD ; Zhang, Z
刊名	CHINESE PHYSICS B
	2009
卷号	18 期号:7 页码:3079
关键词	SEMICONDUCTING MG2SI MG/SI(111) SYSTEM THIN-FILMS INTERFACE GROWTH CRYSTALS CONTACT SILICON
ISSN号	1674-1056
通讯作者	Du, XL (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 degrees C in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 degrees C, 450 degrees C and 650 degrees C, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 degrees C then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45745]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, XN,Wang, Y,Zou, J,et al. Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction[J]. CHINESE PHYSICS B,2009,18(7):3079.
APA	Wang, XN.,Wang, Y.,Zou, J.,Zhang, TC.,Mei, ZX.,...&Zhang, Z.(2009).Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction.CHINESE PHYSICS B,18(7),3079.
MLA	Wang, XN,et al."Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction".CHINESE PHYSICS B 18.7(2009):3079.