Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

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	Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)
	Xu, M ; Liu, CX ; Liu, HF ; Luo, GM ; Chen, XM ; Yu, WX ; Cui, SF ; Li, JH ; Chen, H ; Mai, ZH ; Zhou, JM ; Jia, QJ ; Zheng, WL
刊名	PHYSICS LETTERS A
	2002
卷号	299 期号:1 页码:79
关键词	CHEMICAL-VAPOR-DEPOSITION RAMAN-SPECTROSCOPY PHASE EPITAXY LASER-DIODES GAAS CONDUCTIVITY PHONONS
ISSN号	0375-9601
通讯作者	Xu, M (reprint author), Univ Montana, Inst Phys, A-8700 Leoben, Austria.
中文摘要	The thermal stability of cubic-phase GaN (c-GaN) film grown by molecular-beam epitaxy was investigated by Raman scattering spectroscopy and X-ray scattering. The results of Raman scattering shows that, after annealing at 1000degreesC, the intensity of transverse (TO) and longitudinal (LO) optical peaks from cubic phase obviously decreases while the intensity of TOb peak from the boundary effect slightly decreases, but the transformation of the hexagonal phase (alpha-GaN) can not be detected due to a little of alpha-GaN inclusion. X-ray reflectivity measurements indicate that there is a high-electron-density layer between the substrate and the GaN film, and it becomes uniform and much thinner after high-temperature annealing, counting for the Raman results of the intensity change of the TOb peak. The results of high-angle X-ray diffraction and X-ray reciprocal space mapping revealed that the relative content of alpha-GaN obviously increases after annealing at 1000degreesC, and (10 (1) over bar1) is the most stable diffraction lattice of the alpha-GaN hexagonal phase. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45740]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xu, M,Liu, CX,Liu, HF,et al. Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)[J]. PHYSICS LETTERS A,2002,299(1):79.
APA	Xu, M.,Liu, CX.,Liu, HF.,Luo, GM.,Chen, XM.,...&Zheng, WL.(2002).Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001).PHYSICS LETTERS A,299(1),79.
MLA	Xu, M,et al."Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)".PHYSICS LETTERS A 299.1(2002):79.