The interface roughness exponent in GexSi1-x/Si superlattices | |
Cui, SF ; Luo, GM ; Li, M ; Mai, ZH ; Cui, Q ; Zhou, JM ; Jiang, XM ; Zhang, WL | |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER |
1997 | |
卷号 | 9期号:14页码:2891 |
关键词 | X-RAY-SCATTERING SURFACE-ROUGHNESS REFLECTION GROWTH MULTILAYERS |
ISSN号 | 0953-8984 |
通讯作者 | Cui, SF (reprint author), CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA. |
中文摘要 | The interface roughness and scaling exponent of GexSi1-x/Si strained-layer superlattices (SLSs) grown by molecular beam epitaxy (MBE) have been measured by x-ray reflectivity and diffuse-scattering methods. We have found that for samples grown under identical conditions the root mean square (rms) roughnesses (sigma), the roughness exponents (h), and the lateral correlation length (xi) are dependent upon the thickness and/or the substrate temperatures of the superlattice. The incorporation of a surfactant, such as antimony, can retard interface widening and smooth the interface. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/45269] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Cui, SF,Luo, GM,Li, M,et al. The interface roughness exponent in GexSi1-x/Si superlattices[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1997,9(14):2891. |
APA | Cui, SF.,Luo, GM.,Li, M.,Mai, ZH.,Cui, Q.,...&Zhang, WL.(1997).The interface roughness exponent in GexSi1-x/Si superlattices.JOURNAL OF PHYSICS-CONDENSED MATTER,9(14),2891. |
MLA | Cui, SF,et al."The interface roughness exponent in GexSi1-x/Si superlattices".JOURNAL OF PHYSICS-CONDENSED MATTER 9.14(1997):2891. |
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