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The interface roughness exponent in GexSi1-x/Si superlattices
Cui, SF ; Luo, GM ; Li, M ; Mai, ZH ; Cui, Q ; Zhou, JM ; Jiang, XM ; Zhang, WL
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
1997
卷号9期号:14页码:2891
关键词X-RAY-SCATTERING SURFACE-ROUGHNESS REFLECTION GROWTH MULTILAYERS
ISSN号0953-8984
通讯作者Cui, SF (reprint author), CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA.
中文摘要The interface roughness and scaling exponent of GexSi1-x/Si strained-layer superlattices (SLSs) grown by molecular beam epitaxy (MBE) have been measured by x-ray reflectivity and diffuse-scattering methods. We have found that for samples grown under identical conditions the root mean square (rms) roughnesses (sigma), the roughness exponents (h), and the lateral correlation length (xi) are dependent upon the thickness and/or the substrate temperatures of the superlattice. The incorporation of a surfactant, such as antimony, can retard interface widening and smooth the interface.
收录类别SCI
语种英语
公开日期2013-09-23
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/45269]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Cui, SF,Luo, GM,Li, M,et al. The interface roughness exponent in GexSi1-x/Si superlattices[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1997,9(14):2891.
APA Cui, SF.,Luo, GM.,Li, M.,Mai, ZH.,Cui, Q.,...&Zhang, WL.(1997).The interface roughness exponent in GexSi1-x/Si superlattices.JOURNAL OF PHYSICS-CONDENSED MATTER,9(14),2891.
MLA Cui, SF,et al."The interface roughness exponent in GexSi1-x/Si superlattices".JOURNAL OF PHYSICS-CONDENSED MATTER 9.14(1997):2891.
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