Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition

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	Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
	Hu, GQ ; Kong, X ; Wan, L ; Wang, YQ ; Duan, XF ; Lu, Y ; Liu, XL
刊名	JOURNAL OF CRYSTAL GROWTH
	2003
卷号	256 期号:3-4 页码:416
关键词	MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN HETEROEPITAXIAL GROWTH ELECTRON-DIFFRACTION DEFECT STRUCTURE HETEROSTRUCTURE DISLOCATIONS MICROSCOPY (111)SI LAYER
ISSN号	0022-0248
通讯作者	Hu, GQ: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 2724, Beijing 100080, Peoples R China.
中文摘要	We report the transmission electron microscopy (TEM) study of the microstructure of wurtzitic GaN films grown on Si(I I I) substrates with AlN buffer layers by metalorganic chemical vapor deposition (MOCVD) method. An amorphous layer was formed at the interface between Si and AlN when thick GaN film was grown. We propose the amorphous layer was induced by the large stress at the interface when thick GaN was grown. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the MQW. But no evident reduction of the edge dislocations by the MQW was observed. It was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. Inversion domain is also observed. (C) 2003 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/42117]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hu, GQ,Kong, X,Wan, L,et al. Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2003,256(3-4):416.
APA	Hu, GQ.,Kong, X.,Wan, L.,Wang, YQ.,Duan, XF.,...&Liu, XL.(2003).Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH,256(3-4),416.
MLA	Hu, GQ,et al."Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH 256.3-4(2003):416.