Micro-Raman scattering and photoluminescence study of boron-doped diamond films

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	Micro-Raman scattering and photoluminescence study of boron-doped diamond films
	Wang, YG ; Li, HD ; Xiong, YY ; Zhang, SL ; Lin, ZD ; Feng, K
刊名	DIAMOND AND RELATED MATERIALS
	2000
卷号	9 期号:9-10 页码:1708
ISSN号	0925-9635
通讯作者	Wang, YG: Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China.
中文摘要	Micro-Raman scattering and photoluminescence spectra are implemented to investigate the characteristics of heavily boron-doped polycrystalline and homoepitaxial diamond films. Large differences on peak position and peak shape are observed between different growth sectors, the shift of the one-phonon diamond Raman peak is the largest in homoepitaxial (111) growth sector. These differences are due to different boron doping ratios in different growth sectors, the (111) growth sector contains more boron than the (100) growth sector. Fano-type interference appears in all spectra, the interference intensity increases with the increase of boron incorporation density. Upon boron doping, some luminescence emission bands due to nitrogen and silicon are quenched, the reason for this phenomena is the dramatic reduction of vacancies upon the incorporation of boron accepters. (C) 2000 Elsevier Science S.A. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/42020]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, YG,Li, HD,Xiong, YY,et al. Micro-Raman scattering and photoluminescence study of boron-doped diamond films[J]. DIAMOND AND RELATED MATERIALS,2000,9(9-10):1708.
APA	Wang, YG,Li, HD,Xiong, YY,Zhang, SL,Lin, ZD,&Feng, K.(2000).Micro-Raman scattering and photoluminescence study of boron-doped diamond films.DIAMOND AND RELATED MATERIALS,9(9-10),1708.
MLA	Wang, YG,et al."Micro-Raman scattering and photoluminescence study of boron-doped diamond films".DIAMOND AND RELATED MATERIALS 9.9-10(2000):1708.