MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)

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	MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)
	Li, ZQ ; Chen, H ; Liu, HF ; Li, JH ; Wan, L ; Liu, S ; Huang, Q ; Zhou, JM
刊名	JOURNAL OF CRYSTAL GROWTH
	2000
卷号	208 期号:1-4 页码:786
关键词	MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY GALLIUM NITRIDE STIMULATED-EMISSION THIN-FILMS 001 GAAS SILICON MICROSTRUCTURE SAPPHIRE
ISSN号	0022-0248
通讯作者	Chen, H: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	High-quality cubic GaN epilayer on GaAs(0 0 1) was grown by molecular beam epitaxy equipped with radio frequency nitrogen source. The optimized growth condition is to grow two monolayers thick initial GaN at 600 degrees C under As atmosphere. X-ray diffraction rocking curve shows that the full-width at half-maximum of cubic GaN(0 0 2) diffraction peak is 10 arcmin. The X-ray reciprocal space mapping is used to identify the secondary hexagonal phase and estimate their relative content. (C) 2000 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41791]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, ZQ,Chen, H,Liu, HF,et al. MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)[J]. JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):786.
APA	Li, ZQ.,Chen, H.,Liu, HF.,Li, JH.,Wan, L.,...&Zhou, JM.(2000).MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001).JOURNAL OF CRYSTAL GROWTH,208(1-4),786.
MLA	Li, ZQ,et al."MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)".JOURNAL OF CRYSTAL GROWTH 208.1-4(2000):786.