Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy

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	Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
	Zhu, CX ; Xu, ZG ; Huo, ZL ; Yang, R ; Zheng, ZW ; Cui, YX ; Liu, J ; Wang, YM ; Shi, DX ; Zhang, GY ; Li, FH ; Liu, M
刊名	APPLIED PHYSICS LETTERS
	2011
卷号	99 期号:22
关键词	FLASH MEMORY LAYER
ISSN号	0003-6951
通讯作者	Liu, M: Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China.
中文摘要	Charge trap and loss characteristics of high-k based trapping layer structures are investigated by electrostatic force microscopy, which proves that the interfaces provide dominate trap sites. The effects of post-deposition anneal of HfO(2) and Al(2)O(3) single layer are determined. Based on aforementioned findings, we demonstrate the HfO(2)/Al(2)O(3) bi-layers trapping structure with improved performance. The lateral charge spreading properties are also evaluated by extracted diffusion coefficients to further understand the interface effect. The study may provide insights into fundamental assessment and optimization for charge trapping structures, especially for high-density NAND flash applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664222]
收录类别	SCI
资助信息	MOST [2010CB934200, 2011CBA00600]; National Natural Science Foundation of China [60825403, 61176073]; National Science and Technology Major Project of China [2009ZX02023-005]
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40326]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhu, CX,Xu, ZG,Huo, ZL,et al. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy[J]. APPLIED PHYSICS LETTERS,2011,99(22).
APA	Zhu, CX.,Xu, ZG.,Huo, ZL.,Yang, R.,Zheng, ZW.,...&Liu, M.(2011).Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy.APPLIED PHYSICS LETTERS,99(22).
MLA	Zhu, CX,et al."Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy".APPLIED PHYSICS LETTERS 99.22(2011).