INVESTIGATION OF THE GROWTH-MECHANISM OF DIAMOND(111) FACETS USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

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	INVESTIGATION OF THE GROWTH-MECHANISM OF DIAMOND(111) FACETS USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY
	SUN, BW ; ZHANG, XP ; ZHANG, QZ ; LIN, ZD
刊名	APPLIED PHYSICS LETTERS
	1993
卷号	62 期号:1 页码:31
关键词	H-ATOM CONCENTRATIONS ACETYLENE SURFACE METHYL
ISSN号	0003-6951
通讯作者	SUN, BW: CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,POB 603-7,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The structure and structural changes of an Al78Cu22 (at%) alloy film produced by coevaporation onto a cooled substrate have been investigated with transmission electron microscopy. A series of metastable phase transitions were observed during the crystallization from the as-deposited amorphous phase to the final equilibrium state. The deposit structure at room temperature consists of a mixture of fine grained alpha' crystallites (fcc, a = 4.81 angstrom) with an amorphous phase, and some well-defined crystals with an fcc lattice (a = 7.18 angstrom, namely alpha1). The subsequent annealing led to the grown crystals transforming to an ordered alpha' phase. It is argued that the development of such a transition is the result of a gradual atomic rearrangement - first topologically then a chemically predominant disorder-order transition.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40302]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	SUN, BW,ZHANG, XP,ZHANG, QZ,et al. INVESTIGATION OF THE GROWTH-MECHANISM OF DIAMOND(111) FACETS USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY[J]. APPLIED PHYSICS LETTERS,1993,62(1):31.
APA	SUN, BW,ZHANG, XP,ZHANG, QZ,&LIN, ZD.(1993).INVESTIGATION OF THE GROWTH-MECHANISM OF DIAMOND(111) FACETS USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY.APPLIED PHYSICS LETTERS,62(1),31.
MLA	SUN, BW,et al."INVESTIGATION OF THE GROWTH-MECHANISM OF DIAMOND(111) FACETS USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY".APPLIED PHYSICS LETTERS 62.1(1993):31.