Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC

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	Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC
	Yang, H ; Peng, TH ; Wang, WJ ; Wang, WY ; Chen, XL
刊名	APPLIED SURFACE SCIENCE
	2008
卷号	255 期号:5 页码:3121
关键词	SILICON-CARBIDE OHMIC CONTACTS PATTERN-FORMATION THIN-FILM CRYSTAL NICKEL SEMICONDUCTOR PLATINUM
ISSN号	0169-4332
通讯作者	Chen, XL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	A multilayered metallization Ta/Pt/Ta has been developed for obtaining low resistance ohmic contact to n-type SiC. The electrical, chemical and microstructural properties of the contacts are studied. It is observed that the conducting behavior is rectifying in the as-deposited state, whereas becomes ohmic upon annealing above 900 degrees C for 5 min in an Ar ambient, resulting in a typical specific contact resistance as low as 10 (4) Omega cm(2) range corresponding to a doping level of 2 x 10(18) cm (3). The Auger electron spectroscopy (AES) and X-ray diffraction analysis results indicate that platinum atoms migrate towards SiC to form platinum silicides in intimate contact with SiC substrate. While the C atoms released from the SiC interface interact with out-diffused Ta atoms to form TaC at the contact surface. The addition of Ta into the Pt metallization scheme serves to reduce the residual carbon left behind from SiC dissociation and Pt-silicides formation, thus could lead to improvement of the thermal and electrical stability. Ta/Pt/Ta metallization on n-SiC is an effective method to realize ohmic contact. (C) 2008 Elsevier B.V. All rights reserved.
收录类别	SCI
资助信息	National High Technology Research and Development Program of China [2006AA03A146, 2006AA03A107]; National Key Technology RD program [2007BAE34B00]; National Basic Research Program of China (973 Program) [2007CB936300]; National Natural Science Foundation of P. R. China [50702073]
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40113]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yang, H,Peng, TH,Wang, WJ,et al. Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC[J]. APPLIED SURFACE SCIENCE,2008,255(5):3121.
APA	Yang, H,Peng, TH,Wang, WJ,Wang, WY,&Chen, XL.(2008).Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC.APPLIED SURFACE SCIENCE,255(5),3121.
MLA	Yang, H,et al."Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC".APPLIED SURFACE SCIENCE 255.5(2008):3121.