Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

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	Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
	Luan, CB ; Lin, ZJ ; Lv, YJ ; Meng, LG ; Yu, YX ; Cao, ZF ; Chen, H ; Wang, ZG
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101 期号:11
关键词	MOBILITY
ISSN号	0003-6951
通讯作者	Lin, ZJ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要	With strong surface plasmons excited at the metallic tip, tip-enhanced Raman spectroscopy (TERS) has both high spectroscopic sensitivity and high spatial resolution, and is becoming an essential tool for chemical analysis. It is a great challenge to combine TERS with a high vacuum system due to the poor optical collection efficiency. We used our innovatively designed home-built high vacuum TERS (HV-TERS) to investigate the plasmon-driven in-situ chemical reaction of 4-nitrobenzenethiol dimerizing to dimercaptoazobenzene. The chemical reactions can be controlled by the plasmon intensity, which in turn can be controlled by the incident laser intensity, tunneling current and bias voltage. The temperature of such a chemical reaction can also be obtained by the clearly observed Stokes and Anti-Stokes HV-TERS peaks. Our findings offer a new way to design a highly efficient HV-TERS system and its applications to chemical catalysis and synthesis of molecules, and significantly extend the studies of chemical reactions.
收录类别	SCI
资助信息	National Natural Science Foundation of China [11174182, 10774090]; Specialized Research Fund for the Doctoral Program of Higher Education [20110131110005]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39911]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Luan, CB,Lin, ZJ,Lv, YJ,et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS LETTERS,2012,101(11).
APA	Luan, CB.,Lin, ZJ.,Lv, YJ.,Meng, LG.,Yu, YX.,...&Wang, ZG.(2012).Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.APPLIED PHYSICS LETTERS,101(11).
MLA	Luan, CB,et al."Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".APPLIED PHYSICS LETTERS 101.11(2012).