Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films

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	Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films
	Wang, J ; Han, B ; Chen, F ; Zhao, T ; Xu, FZ ; Zhou, YL ; Chen, GH ; Lu, HB ; Yang, QS ; Cui, TH
刊名	SOLID STATE COMMUNICATIONS
	2003
卷号	126 期号:8 页码:431
关键词	MOLECULAR-BEAM EPITAXY JOSEPHSON-JUNCTIONS ATOMIC-LAYER TRANSPORT
ISSN号	0038-1098
通讯作者	Wang, J: Louisiana Tech Univ, Dept Elect Engn, Inst Micromfg, POB 6586,911 Hergot Ave, Ruston, LA 71272 USA.
中文摘要	Highly reliable dc superconducting quantum interference devices (SQUIDs) in temperature with step edge junctions (SEJs) were fabricated with laser molecular beam epitaxy (L-MBE) YBa2Cu3OX thin films. The reflection high-energy electron diffraction oscillation cycles proved that the superconducting films were epitaxially grown on the atomic scale. In the dc SQUID temperature transition curves, the tail structures appear at a temperature close to the transition point. The critical current dependent temperature, I(C)similar to(1-T/T-C)(2), shows that the L-MBE SEJ behaves like an SNS type junction. The white noise level, 2.0 X 10(-5) Phi(0)rootHz at 200 Hz, triangular wave signal, critical current and other characteristics exhibit no change after 42 temperature cycles and 108 days of storage. (C) 2003 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39348]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, J,Han, B,Chen, F,et al. Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films[J]. SOLID STATE COMMUNICATIONS,2003,126(8):431.
APA	Wang, J.,Han, B.,Chen, F.,Zhao, T.,Xu, FZ.,...&Cui, TH.(2003).Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films.SOLID STATE COMMUNICATIONS,126(8),431.
MLA	Wang, J,et al."Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films".SOLID STATE COMMUNICATIONS 126.8(2003):431.