High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers | |
Li, CR ; Tanner, BK ; Ashenford, DE ; Hogg, JHC ; Lunn, B | |
刊名 | JOURNAL OF APPLIED PHYSICS |
1997 | |
卷号 | 82期号:5页码:2281 |
关键词 | EPITAXIAL MULTILAYERS RAMAN-SPECTROSCOPY HETEROSTRUCTURES DEFECTS SURFACE DISLOCATIONS RELAXATION GROWTH GA2TE3 SCALE |
ISSN号 | 0021-8979 |
通讯作者 | Li, CR: UNIV DURHAM,DEPT PHYS,SOUTH RD,DURHAM DH1 3LE,ENGLAND. |
中文摘要 | The surface and interface structures of ZnTe epilayers grown by molecular beam epitaxy on GaSb (001) substrates under different conditions have been investigated by high resolution x-ray diffraction and grazing incidence scattering. Reciprocal space mapping around the symmetrical diffraction reciprocal point 004 and asymmetrical diffraction point (115) over bar showed that the ZnTe epilayers, in the samples investigated, were fully strained to the substrate, The crystalline quality of the ZnTe epilayer grown on a substrate annealed in a Zn flux was very good, while evidence for an interfacial layer, of thickness varying from 2-20 nm, was found when the substrate was annealed in a Te flux prior to growth. This is attributed to Ga2Te3 formation at the interface. The interfacial layer roughens the interface and surface, and both crystal truncation rod measurements and grazing incidence x-ray reflectivity show the surface roughness to be about 4 nm. Such a rough surface and interface is also inferred from the broader distribution along the transverse direction in reciprocal space maps, A shorter lateral correlation length is found for the roughness of the sample containing the interfacial layer. The disappearance of interference fringes is attributed to nonuniformity of the interfacial layer. (C) 1997 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/39246] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, CR,Tanner, BK,Ashenford, DE,et al. High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers[J]. JOURNAL OF APPLIED PHYSICS,1997,82(5):2281. |
APA | Li, CR,Tanner, BK,Ashenford, DE,Hogg, JHC,&Lunn, B.(1997).High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers.JOURNAL OF APPLIED PHYSICS,82(5),2281. |
MLA | Li, CR,et al."High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers".JOURNAL OF APPLIED PHYSICS 82.5(1997):2281. |
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