Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films | |
Lu, C ; Tian, SB ; Gu, CZ ; Li, JJ | |
刊名 | DIAMOND AND RELATED MATERIALS
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2011 | |
卷号 | 20期号:2页码:217 |
关键词 | NANOCRYSTALLINE DIAMOND THIN-FILMS RAMAN |
ISSN号 | 0925-9635 |
通讯作者 | Li, JJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | Microcrystalline boron-doped diamond (BDD) films were prepared on silicon substrates by hot-filament chemical vapor deposition method. Different grain sizes of the boron-doped diamond films with nearly the same boron concentration were obtained by changing the nuclei concentration on the silicon substrates. The electrical transport behaviors of as-prepared boron-doped diamond films were measured, and the results revealed that with the increase of the grain sizes on the BDD films, the superconducting transition temperature was evidently increased. This phenomenon indicates that the superconducting transition of microcrystalline BDD films is influenced by the inhomogeneity aroused by the grain boundary effect. Our results could expand our understanding of the superconducting mechanism of microcrystalline BDD films, and are also significant to conventional applications of BDD materials. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38798] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Lu, C,Tian, SB,Gu, CZ,et al. Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films[J]. DIAMOND AND RELATED MATERIALS,2011,20(2):217. |
APA | Lu, C,Tian, SB,Gu, CZ,&Li, JJ.(2011).Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films.DIAMOND AND RELATED MATERIALS,20(2),217. |
MLA | Lu, C,et al."Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films".DIAMOND AND RELATED MATERIALS 20.2(2011):217. |
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