Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

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	Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
	Sheng, SR ; Liao, XB ; Kong, GL
刊名	APPLIED PHYSICS LETTERS
	2001
卷号	78 期号:17 页码:2509
关键词	CONSTANT PHOTOCURRENT METHOD A-SI-H ABSORPTION FILMS SPECTROSCOPY DEPOSITION STABILITY DILUTION
ISSN号	0003-6951
通讯作者	Sheng, SR: Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada.
中文摘要	The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 eV and a shoulder at about 1.2 eV below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. A concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. Hydrogen-diluted and appropriately boron-compensated a-Si:H films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (C) 2001 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38576]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Sheng, SR,Liao, XB,Kong, GL. Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation[J]. APPLIED PHYSICS LETTERS,2001,78(17):2509.
APA	Sheng, SR,Liao, XB,&Kong, GL.(2001).Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation.APPLIED PHYSICS LETTERS,78(17),2509.
MLA	Sheng, SR,et al."Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation".APPLIED PHYSICS LETTERS 78.17(2001):2509.